| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method for a semiconductor device by which excellent transistor characteristics are obtained and which uses an STI. SOLUTION: The manufacturing method for the semiconductor device contains a process in which a trench for isolating an element is formed by etching a semiconductor substrate using a pattern comprising a first silicon nitride film with a window as a mask, a process in which a second silicon nitride film is deposited to cover the internal surface of the trench, a process in which a first silicon oxide film is formed to bury the trench, a process in which the first silicon oxide film in an upper section in the trench is etched and removed, a process in which the exposed second silicon nitride film is etched and removed, a process in which a second silicon oxide film is formed to bury the trench, a process in which the second silicon oxide film is polished chemically and mechanically, and a process in which the exposed first silicon nitride film is etched and removed. COPYRIGHT: (C)2004,JPO&NCIPI
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