| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor vapor phase growth system which can form an epitaxial layer having extremely high uniformity inside a film-thickness face. SOLUTION: The semiconductor vapor phase growth system comprises the steps of placing a plurality of substrates 4 circumferentially on a rotating platy susceptor 3 while supporting their lower faces or crystal growth faces 4a so as to face a gas passage side, and growing semiconductor crystals epitaxially on the heated substrates 4 while flowing material gas in the direction of the diameter of the susceptor 3 by an organic metal vapor phase growth method. The crystal growth faces 4a of the substrates 4 are arranged so as to be oblique in the flowing direction of the material gas. Concretely, surfaces of the gas passage side of the susceptor 3 are formed of oblique faces 3a or 3b having a predetermined oblique angleθfallen or raised toward the susceptor center, and the crystal growth faces 4a of the substrates are positioned on the oblique surfaces. COPYRIGHT: (C)2004,JPO&NCIPI
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