APPARATUS FOR MANUFACTURING COMPOUND SEMICONDUCTOR

摘要

PROBLEM TO BE SOLVED: To provide a apparatus for manufacturing a compound semiconductor by a vertical temperature gradient solidification method which realizes crystallization while suppressing dislocation due to thermal strain and dislocation due to mechanical strain. SOLUTION: The heating apparatus 70 has such a structure that a low temperature zone 22 (non-heat generating part 8) lower at least by≥5°C than the melting point is locally formed in the circumference direction in a lower region of the solid/liquid interface 23 and that the low temperature zone 22 is relatively moved upward with respect to the crystal growing chamber 3. This satisfies two conflicting requirements of (1) promoting heat dissipation and (2) suppressing thermal strain, and single crystal growth with little dislocation is realized with an extremely simple inner structure of a furnace. COPYRIGHT: (C)2004,JPO&NCIPI