| 发明名称 |
DATA ERASING METHOD OF NONVOLATILE SEMICONDUCTOR MEMORY DEVICE |
| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To stabilize the erasing operation and to increase the erasing speed in a data erasing method of a nonvolatile semiconductor memory device. <P>SOLUTION: Unnecessary pulse applying operations are eliminated by performing verify-operation before pulse applying operations. <P>COPYRIGHT: (C)2004,JPO&NCIPI</p> |
| 申请公布号 |
JP2004206829(A) |
申请公布日期 |
2004.07.22 |
| 申请号 |
JP20020376747 |
申请日期 |
2002.12.26 |
| 申请人 |
RENESAS TECHNOLOGY CORP |
发明人 |
MIZOGUCHI SHINICHI;FUTATSUYA TOMOSHI;HAYASAKA TAKASHI |
| 分类号 |
G11C16/02;G11C16/16;G11C16/34;(IPC1-7):G11C16/02 |
主分类号 |
G11C16/02 |
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