| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device of a smaller size. SOLUTION: The semiconductor device comprises a semiconductor substrate 1, an active region formed on the semiconductor substrate 1, a field insulating film 6 that separates the active regions adjoining each other, an insulating film layer 7 formed on the semiconductor substrate 1 to cover the active region and the field insulating film 6, and an electrode pad 12 formed on the insulating layer 7. The active region is composed of a source region 2, a drain region 3, and a channel region under a gate oxide film 5, and is formed on the semiconductor substrate 1 directly below the electrode pad 12. The electrode pad 12 is so arranged that its peripheral part is not positioned directly above the gate oxide film 4. COPYRIGHT: (C)2004,JPO&NCIPI |
