DOUBLE-GATE TYPE FIELD EFFECT TRANSISTOR AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a double-gate type field effect transistor (DGFET) of a self-aligning planar type with a front gate and a back gate aligned. SOLUTION: A method of manufacturing this double-gate type field effect transistor (DGFET) comprises: a process of preparing a stacked double-gate structure provided with at least a back gate 14, a back gate dielectric provided on the back gate 14, a channel layer provided on the back gate dielectric, a front gate dielectric provided on the channel layer, and a front gate 22 provided on the front gate dielectric; a process of patterning the front gate 22 of the stacked double-gate structure; a process of forming a sidewall spacer on the exposed sidewall of the pattered front gate 22; and a process of forming a carrier depletion zone at a part of the back gate and allowing the carrier depletion zone to align the back gate to the front gate. COPYRIGHT: (C)2004,JPO&NCIPI