| 摘要 |
The co-self-assembly of organic, e.g., block copolymer, and inorganic, e.g., sol-gel, components is employed to create nanometer features of silicon dioxide type materials in thin films on silicon surfaces. In the preferred embodiment, sol-gel chemistry is used to introduce inorganic components (preferably 3-glycidoxy-propyltrimethoxysilane and aluminum-tri-sec-butoxide) into a block copolymer (preferably poly (isoprene-block-ethylene oxide) (PI-b-PEO)), as a structure-directing agent. The inorganic components preferentially migrate to the PEO block and swell the copolymer into different morphologies depending on the amount of sol-gel precursors added. Thin films (e.g., below 100 nm) are created by spin coating the hybrid solution onto a silicon wafer. An inverse hexagonal morphology, for example, is produced in which the polymer forms nanopores within an inorganic matrix. Through heat treatment the organic phase can subsequently be removed leaving an all-inorganic porous nanostructure on the wafer.
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