SIMOX SUBSTRATE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide an SIMOX substrate wherein strained stress caused in an interface between a partially buried insulation film and a bulk layer is reduced to suppress the occurrence of dislocation due to the strained stress, and also to provide a method of manufacturing the same. SOLUTION: The thickness of ends 12a of a buried silicon oxide film 12 partially formed inside a silicon single crystal substrate 10 is made gradually thinner as it goes to the ends of the buried insulation film. Due to this structure, the volume expansion of the buried silicon oxide film 12 is reduced during high-temperature heat treatment. Consequently, strained stress caused in the interface between the buried silicon oxide film 12 and the bulk layer 14 can be reduced, thus suppressing the occurrence of dislocation. COPYRIGHT: (C)2004,JPO&NCIPI