| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of producing semiconductor single crystals which realizes temperature control of a semiconductor melt and improvement in the quality of semiconductor single crystals, and production control and the device are simplified. SOLUTION: In single crystal production, a polycrystalline semiconductor material is heated and melted in a vessel, a seed single crystal is dipped into the liquid of the melt, and a single crystal is grown while lifting it upward in such a manner that the melt is resolidified on the seed single crystal and is lifted with the seed. A first heating means where heating parts are arranged at prescribed intervals along the outside of the vessel where the crystal material is charged, and a second heating means where heating parts are arranged at the circumferential wall of the vessel are provided, and the polycrystalline material in the vessel is heated and melted by the first heating means or the first and second heating means. Subsequently, the objective temperature of the first heating means is set to the melting point of the semiconductor material or to the temperature in the vicinity thereof and is feedback-controlled. In parallel to this, the objective temperature of the second heating means is set to the single crystal growth temperature of the material melt. Then the seed crystal is dipped into the semiconductor melt and pulled upward. Then, while performing feedback control, the seed single crystal is dipped into the liquid surface of the semiconductor melt in the vessel and is pulled upward. COPYRIGHT: (C)2004,JPO&NCIPI
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