发明名称 Semiconductor integrated circuit and fabrication method for same
摘要 A semiconductor integrated circuit is provided, which comprises a first cell comprising a plurality of transistors, a second cell comprising a PMOS transistor section and an NMOS transistor section, the PMOS transistor section comprising a first PMOS transistor and a second PMOS transistor connected to the first PMOS transistor in series, the NMOS transistor section comprising a first NMOS transistor and a second NMOS transistor connected to the first NMOS transistor in series. A predetermined scheme is used to connect between the first cell and the second cell, between the plurality of transistors in the first cell, and between the PMOS transistor section and the NMOS transistor section in the second cell.
申请公布号 US2004140483(A1) 申请公布日期 2004.07.22
申请号 US20030720764 申请日期 2003.11.25
申请人 SHARP KABUSHIKI KAISHA 发明人 YONEMARU MASASHI
分类号 H01L21/822;H01L21/82;H01L21/8234;H01L27/02;H01L27/04;H01L27/088;H01L27/10;H01L27/118;H03K19/00;H03K19/173;(IPC1-7):H01L21/82 主分类号 H01L21/822
代理机构 代理人
主权项
地址