| 发明名称 |
Semiconductor device |
| 摘要 |
There is provided a semiconductor device including a semiconductor substrate with a trench, and a particulate insulating layer filling at least a lower portion of the trench and containing insulating particles. The semiconductor device may further include a reflowable dielectric layer covering an upper surface of the particulate insulating layer, the insulating particles being stable at the melting point or the softening point of the reflowable dielectric layer.
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| 申请公布号 |
US2004140521(A1) |
申请公布日期 |
2004.07.22 |
| 申请号 |
US20030694903 |
申请日期 |
2003.10.29 |
| 申请人 |
OKUMURA HIDEKI;KOBAYASHI HITOSHI;TSUCHITANI MASANOBU;OSAWA AKIHIRO;AIDA SATOSHI;KOUZUKI SHIGEO;IZUMISAWA MASARU |
发明人 |
OKUMURA HIDEKI;KOBAYASHI HITOSHI;TSUCHITANI MASANOBU;OSAWA AKIHIRO;AIDA SATOSHI;KOUZUKI SHIGEO;IZUMISAWA MASARU |
| 分类号 |
H01L21/316;H01L21/762;H01L29/06;H01L29/78;(IPC1-7):H01L21/823;H01L29/00 |
主分类号 |
H01L21/316 |
| 代理机构 |
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