GATE ELECTRODE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE WITH THE SAME

摘要

PURPOSE: A gate electrode and a method for manufacturing a semiconductor device with the same are provided to prevent the formation of a silicon oxide layer between conductive layers by using a reaction barrier layer containing Ge. CONSTITUTION: The first conductive layer(23) containing silicon is formed on a semiconductor substrate(21). The first reaction barrier layer(24a) containing Ge is formed on the first conductive layer. The second reaction barrier layer(25) containing N2 is formed on the first reaction barrier layer. The second metallic conductive layer(26) is formed on the second reaction barrier layer.