| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a translucent electrode for a light emitting semiconductor element having a translucent structure for preventing ball-up effectively, and also to provide its producing process. <P>SOLUTION: The translucent electrode for a light emitting semiconductor element comprises: a first translucent layer of at least one kind of metal selected from a group of Au, Pt and Pd or of an alloy of two kinds or more of metal formed in contact with the surface of a p-type GaN based compound semiconductor and providing ohmic contact; and a second layer of a translucent metal oxide containing an oxide of at least one kind of metal selected from a group of Ni, Cr and Co and formed on the first layer wherein the surface of the second layer does not contain the metal of the first layer. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
