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发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
摘要 A silicon oxide film 102, a Pt film 103x, a Ti film 104x and a PZT film 105x are deposited in this order over a Si substrate 101. The Si substrate 101 is placed in a chamber 106 so that the PZT film 105x is irradiated with an EHF wave 108. The irradiation with the EHF wave locally heats a dielectric film such as the PZT film. As a result, it is possible to improve, for example, the leakage property of the dielectric film without adversely affecting a device formed on the Si substrate 101.
申请公布号 US2004142579(A1) 申请公布日期 2004.07.22
申请号 US20020311292 申请日期 2002.12.17
申请人 发明人 MORITA KIYOYUKI;MIYAKE SHOJI;UEDA MICHIHITO;OHTSUKA TAKASHI;NICHIKAWA TAKASHI;INOUE AKIRA;TAKAGI TAKESHI;HARA YOSHIHIRO;KUBO MINORU
分类号 H01L21/02;H01L21/314;H01L21/316;H01L21/77;H01L21/8238;H01L21/8242;H01L21/8246;H01L21/84;H01L27/092;H01L27/115;H01L27/12;H01L29/10;H01L29/78;H01L29/786;H01L29/80;(IPC1-7):H01L21/00 主分类号 H01L21/02
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