SOLID-STATE IMAGING DEVICE

摘要

A solid-state imaging device capable of concurrently attaining a wide dynamic range and a high low-illuminance sensitivity. A photo-diode and a first transistor are provided in series between the ground and the drain, and a signal corresponding to a current or charge generated in the photo-diode according to a light input is output from a detection node between the photo-diode and the first transistor. A control unit performs the control of alternately repeating a logarithmic operation duration for setting the gate potential PhiR of the first transistor to a first level to obtain a logarithm-converted photoelectric conversion signal and a linear operation duration for setting the gate potential PhiR of the first transistor to a second level to obtain a linear photoelectric conversion signal.