GROUP III NITRIDE BASED FLIP-CHIP INTEGRATED CIRCUIT AND METHOD FOR FABRICATING

摘要

A flip-chip integrated circuit and method for fabricating the integrated circuit are disclosed. A method according to the invention comprises forming a plurality of active semiconductor devices on a wafer and separating the acti ve semiconductor devices. Passive components and interconnections are formed on a surface of a circuit substrate and at least one conductive via is formed through the circuit substrate. At least one of the active semiconductor devices is flip-chip mounted on the circuit substrate with at least one of t he bonding pads in electrical contact with one of the conductive via. A flip-ch ip integrated circuit according to the present invention comprises a circuit substrate having passive components and interconnections on one surface and can have a conductive via through it. An active semiconductor device is flip - chip mounted on the circuit substrate, one of the at least one via is in contact with one of the at least one the device~s terminal. The present invention is particularly applicable to Group III nitride based active semiconductor devices grown on SiC substrates. The passive components and interconnects can then be formed on a lower cost, higher diameter wafer made of GaAs or Si. After separation, the Group III devices can be flip-chip mounted on the GaAs or Si substrate.