DIAMOND ELECTRONIC ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a diamond electronic element which has a small forward resistance, keeps a small backward leakage current, and is kept high in effective efficiency and performance.

SOLUTION: An undoped diamond layer 2 is formed without dopant on an n-type semiconductor substrate 1 having a dopant concentration of 1×1017cm-3or above, a high-concentration doped diamond layer 3 which has been doped with boron as high as 1×1019cm-3or above to turn to a low-resistance n-type semiconductor is formed on the undoped diamond layer 2, and furthermore an electrode 4 is formed on the high-concentration doped diamond layer 3 for the formation of the diamond electronic element.

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