| 摘要 |
PURPOSE: A method for manufacturing a capacitor is provided to reduce contact resistance by decreasing the contact area and to prevent collapse by increasing the contact area between a storage node and a lading pad. CONSTITUTION: A contact plug(10) is formed between gate patterns. A landing pad contact hole is formed to expose the contact plug. An SOG(Spin On Glass) layer(20) is filled in the landing pad contact hole and isolated to each cell. A sacrificial layer(22) is formed on the resultant structure and selectively etched to form a storage node contact. The SOG layer is removed by wet-etching. Then, a storage node is formed and the sacrificial layer is removed.
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