| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a composition for the formation of an antireflection film which has a high antireflection effect, causes no intermixing with a resist layer and can be used in lithographic processes using irradiation light of ArF excimer laser (at 193 nm wavelength). <P>SOLUTION: The composition for the formation of an antireflection film for lithography contains a polymer compound containing a phosphorus atom. The polymer compound is a polymer of a diene compound having at least one substituent of an organic group containing a phosphorus atom. The organic group containing a phosphorus atom is a monovalent organic group derived from a phosphonic acid ester. The diene polymer is a substituted butadiene polymer comprising a cis-1,4-structure, trans-1,4-structure or 1,2-structure. The polymer compound has a repeating unit structure expressed by formula (1). <P>COPYRIGHT: (C)2004,JPO&NCIPI |
