| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging device for improving the quality of image of a MOS (metal oxide semiconductor)-type image sensor, by preventing the generation of a shading phenomenon. SOLUTION: A potential barrier to a photo-generating charge in a charge extracting region 18 is so controlled that the photo-generating charge is stored in the storing region 24 via a charge transfer path 13a during a charge storing period, and the photo-generating charge is discharged through the charge taking-out region 18 during a no-charge storing period. Then, a threshold voltage modulated via the photo-generating charge stored in the charge storing region 24 during the charge storing period, including the photo-generating charge stored in the charge storing region 24 during the no-charge storing period, immediately before and after the charge storing period, is generated as an optical signal, so that the influence of the charge stored immediately before and after the charge storing period is offset. COPYRIGHT: (C)2004,JPO&NCIPI
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