发明名称 THIN FILM MANUFACTURING METHOD AND SPUTTERING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a thin film manufacturing method for easily manufacturing a thin film of high degree of inclination of the film thickness. SOLUTION: A thin film is deposited by sputtering by spatially separating film deposition process zones 20 and 40 and a reaction process zone 60 from each other in a vacuum tank 11. In an intermediate thin film depositing step, an intermediate thin film consisting of incomplete reactant is formed. In this intermediate thin film depositing step, a correction plate 35 to unify the film thickness of the thin film to be deposited and a blocking plate 36 to give a desired film thickness distribution to the thin film to be deposited with respect to a surface to deposit a thin film of a substrate S are disposed between the substrate S and targets 29a, 29b, 49a and 49b to deposit an intermediate thin film while the substrate S, the correction plate 35 and the blocking plate 36 are relatively moved to each other. In a film composition changing step to deposit a final thin film, the intermediate thin film is reacted with active species of reactive gas in the reaction process zone 60 to increase the film thickness of the final thin film more than the film thickness of the intermediate thin film. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004204304(A) 申请公布日期 2004.07.22
申请号 JP20020375336 申请日期 2002.12.25
申请人 SHINCRON:KK 发明人 SO MATASHIYU;SAKURAI TAKESHI
分类号 G02B5/28;C23C14/00;C23C14/34;G02B1/10;(IPC1-7):C23C14/34 主分类号 G02B5/28
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