| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for inexpensively suppressing the occurrence of cracks in wafers during the process in manufacturing IGBTs with a thin structure. SOLUTION: The manufacturing method includes the steps of forming a SIMOX structure to a substrate 10, forming a buffer layer 12, forming a high resistance layer 13, forming a MOS gate structure, and removing at least part of the rear side of the substrate. As a result, all ion implantation works can be performed in a state of thick wafer. Further, this manufacturing method requires no other support substrate. COPYRIGHT: (C)2004,JPO&NCIPI
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