发明名称 |
Nonvolatile semiconductor memory device and data program method thereof |
摘要 |
A nonvolatile semiconductor memory device includes cell transistors connected to a plurality of wirings, word lines each commonly connected to the gate electrodes of those of the cell transistors which are arranged on a corresponding row, and driving circuits respectively connected to the plurality of wirings. The driving circuit includes a detection circuit which detects threshold voltage of the cell transistor in a verify operation, a storage circuit which stores threshold voltage detected and a potential setting circuit which sets potential of the wiring to at least three potentials based on the threshold voltage stored in the storage circuit in a program operation following the verify operation.
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申请公布号 |
US2004141377(A1) |
申请公布日期 |
2004.07.22 |
申请号 |
US20030700508 |
申请日期 |
2003.11.05 |
申请人 |
ARAI FUMITAKA;SHIMIZU AKIRA |
发明人 |
ARAI FUMITAKA;SHIMIZU AKIRA |
分类号 |
G11C16/02;G11C16/04;G11C16/06;G11C16/10;G11C16/34;(IPC1-7):G11C16/06 |
主分类号 |
G11C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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