发明名称 |
Method of manufacturing highly efficient semiconductor device |
摘要 |
Provided is a method of manufacturing a semiconductor device. The method includes (a) sequentially stacking a first semiconductor layer, a mask layer, and a metal layer on a substrate; (b) anodizing the metal layer to change the metal layer into a metal oxide layer including a plurality of nanoholes; (c) etching the mask layer using the metal oxide layer as an etch mask until the nanoholes are extended to the surface of the first semiconductor layer; (d) removing the metal oxide layer; and (e) depositing a second semiconductor layer on the mask layer and the first semiconductor layer. The present invention reduces defect density and promotes a uniform defect distribution.
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申请公布号 |
US2004142503(A1) |
申请公布日期 |
2004.07.22 |
申请号 |
US20030660561 |
申请日期 |
2003.09.12 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE JEONG-WOOK;YOO JI-BEOM;SONE CHEOL-SOO;SUNG YOUN-JOON |
分类号 |
H01L21/20;H01L33/32;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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