发明名称 |
Structure of a CMOS image sensor and method for fabricating the same |
摘要 |
An image sensor device and method for forming the same include a photodiode formed in a substrate, at least one electrical interconnection line electrically associated with the photodiode, a light passageway having a light inlet, the light passageway being positioned in alignment with the photodiode, a color filter positioned over the light inlet of the light passageway and a lens positioned over the color filter in alignment with the light passageway wherein the at least one electrical interconnection line includes a copper interconnection formation having a plurality of interlayer dielectric layers in a stacked configuration with a diffusion barrier layer between adjacent interlayer dielectric layers, and a barrier metal layer between the copper interconnection formation and the plurality of interlayer dielectric layers and intervening diffusion barrier layers. An image sensor device may employ copper interconnections if a barrier metal layer is removed from above a photodiode.
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申请公布号 |
US2004140564(A1) |
申请公布日期 |
2004.07.22 |
申请号 |
US20030633709 |
申请日期 |
2003.08.05 |
申请人 |
LEE SOO-GEUN;PARK KI-CHUL;LEE KYOUNG-WOO |
发明人 |
LEE SOO-GEUN;PARK KI-CHUL;LEE KYOUNG-WOO |
分类号 |
H01L21/3205;H01L21/768;H01L23/52;H01L23/522;H01L23/532;H01L27/14;H01L27/146;H01L31/0224;H04N5/335;H04N5/369;H04N5/374;(IPC1-7):H01L23/48 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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