METHOD FOR FORMING BIT LINE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a bit line of a semiconductor device is provided to reduce contact resistance and to improve contact filling property by using a ruthenium thin film as the bit line. CONSTITUTION: An interlayer dielectric(12) is formed on a semiconductor substrate(10) with a lower conductive layer. A bit line contact hole is formed by selectively etching the interlayer dielectric. A barrier metal film(14) is formed on the bit line contact hole. A Ru thin film(15) as a bit line is deposited to fill the bit line contact hole by CVD(Chemical Vapor Deposition).