METHOD FOR FORMING SEMICONDUCTOR DEVICE HAVING SELF-ALIGNED CONTACT STRUCTURE

摘要

PURPOSE: A method for forming a semiconductor device having a self-aligned contact structure is provided to reduce a self-aligned contact resistance by forming a thin spacer. CONSTITUTION: A gate pattern(12) is formed on a semiconductor substrate(1). A spacer(15') is formed on a sidewall of the gate pattern. An outer part of the spacer is removed partially. An etch stop layer(19) is laminated on the semiconductor substrate including the spacer. An interlayer dielectric(21) is formed on the etch stop layer. A trench for exposing the etch stop layer is formed by patterning the interlayer dielectric. The exposed etch stop layer is removed therefrom. The trench is filled by a conductive material(25). The gate pattern is exposed by a planarization process. The conductive material and the interlayer dielectric are maintained between the gate patterns.