| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to prevent leakage current, via fence and via undercut by filling pores of a porous insulating layer using an ALD(Atomic Layer Deposition) oxide layer. CONSTITUTION: A porous insulating layer(112) is deposited on a semiconductor substrate(110). A contact hole is formed by selectively etching the porous insulating layer. An ALD oxide layer(116) as a spacer is formed at inner walls of the contact hole to fill pores. Then, a metal interconnection(120) is formed in the contact hole.
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