发明名称 PROTECTION CIRCUIT
摘要 <P>PROBLEM TO BE SOLVED: To provide a protection circuit that can prevent the increase of a transistor capacity for driving a load. <P>SOLUTION: In this protection circuit 10, when a surge voltage is caused by turning off the power of a load 11, a Zener diode 31 is turned on and subsequently a charge-pump circuit 15 is turned on. Then, an output voltage of a prescribed value from the charge-pump circuit 15 turns on a MOSFET 13. As a result, a voltage impressed to the MOSFET 13 on the occurrence of the surge voltage can be suppressed, and the capacity increase of the MOSFET 13 can be controlled. <P>COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004208469(A) 申请公布日期 2004.07.22
申请号 JP20020377452 申请日期 2002.12.26
申请人 AUTO NETWORK GIJUTSU KENKYUSHO:KK;SUMITOMO WIRING SYST LTD;SUMITOMO ELECTRIC IND LTD 发明人 TAKAGI KOICHI;IKEDA KEIZO;MAYAMA SHUJI
分类号 H02H9/04;H02M1/00;H03K17/08;H03K17/687 主分类号 H02H9/04
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