| 发明名称 |
MULTI-LAYER INTEGRATED SEMICONDUCTOR STRUCTURE HAVING AN ELECTRICAL SHIELDING PORTION |
| 摘要 |
<p>A multi-layer integrated semiconductor structure is provided, which includes at least a first semiconductor structure (20) and a second semiconductor structure (40) coupled together via an interface. The interface includes at least a first portion (38a) adapted to provide a communication interface between the first semiconductor structure (20) and the second semiconductor structure (40) and at least a second portion (38b) adapted to reduce electrical interference between the first semiconductor structure (20) and the second semiconductor structure (40).</p> |
| 申请公布号 |
WO2004061961(A1) |
申请公布日期 |
2004.07.22 |
| 申请号 |
WO2003US41514 |
申请日期 |
2003.12.30 |
| 申请人 |
MASSACHUSETTS INSTITUTE OF TECHNOLOGY |
发明人 |
REIF, RAFAEL;CHECKA, NISHA;CHANDRAKASAN, ANANTHA |
| 分类号 |
H01L21/60;H01L21/68;H01L23/48;H01L23/522;H01L25/065;(IPC1-7):H01L23/552;H01L21/98 |
主分类号 |
H01L21/60 |
| 代理机构 |
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代理人 |
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| 主权项 |
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