METHOD AND DEVICE FOR PLASMA-ETCHING ORGANIC MATERIAL FILM

摘要

A support electrode (2) and a counter electrode (16) constituting parallel flat-plate electrodes are disposed in a process container (1). A substrate (W) having an organic material film formed thereon is supported on the support electrode (2). High-frequency power, for forming plasma, having a frequency of at least 40 MHz is applied to this support electrode (2) to form a high-frequency field between the support electrode (2) and the counter electrode (16). A process gas is supplied into the process container (1) to form process gas plasma by means of the high-frequency field. This plasma is used to plasma-etch the organic material film on the substrate (W) with an inorganic material film as a mask. The process gas includes an ionization promoting gas, such as Ar, having an ionization energy from a normal state or an ionization energy from a metastable state of up to 10 eV and a maximum ionized sectional area of at least 2x10<16> cm<2>.