发明名称 DIAMOND FILM-FORMING SILICON AND ITS MANUFACTURING METHOD
摘要 The present invention intends to provide an industrially applicable diamond electrode and a diamond-coated silicon used in the electrode. A silicon substrate having a thickness of 500 mum or less, at least partially coated with electrically conductive diamond is used as a diamond-coated silicon. In addition, an electrically conductive support substrate and the diamond-coated silicon is used as an electrode. The diamond-coated silicon is flexible and it can be adhered to the electrically conductive support substrate, and thereby a large area electrode and a three-dimensional electrode structure can be easily obtained.
申请公布号 AU2003292744(A1) 申请公布日期 2004.07.22
申请号 AU20030292744 申请日期 2003.12.24
申请人 EBARA CORPORATION 发明人 HIROYUKI FUJIMURA;ROBERTO MASAHIRO SERIKAWA;NAOKI ISHIKAWA;TAKAHIRO MISHIMA
分类号 C30B29/06;C23C16/27;C23C16/54;C30B25/02;C30B25/18 主分类号 C30B29/06
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