发明名称 |
Process for manufacturing a memory device, in particular a phase change memory, including a silicidation step |
摘要 |
A process wherein an insulating region (13) is formed in a body at least around an array portion (51) of a semiconductor body (10); a gate region (16) of semiconductor material is formed on top of a circuitry portion (51) of the semiconductor body (10); a first silicide protection mask (52) is formed on top of the array portion; the gate region (16) and the active areas (43) of the circuitry portion (51) are silicided and the first silicide protection mask (52) is removed. The first silicide protection mask (52) is of polysilicon and is formed simultaneously with the gate region (16). A second silicide protection mask (53) of dielectric material covering the first silicide protection mask (52) is formed before silicidation of the gate region (16). The second silicide protection mask (53) is formed simultaneously with spacers (41) formed laterally to the gate region (16). <IMAGE> <IMAGE>
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申请公布号 |
EP1439579(A1) |
申请公布日期 |
2004.07.21 |
申请号 |
EP20030425017 |
申请日期 |
2003.01.15 |
申请人 |
STMICROELECTRONICS S.R.L.;OVONYX INC. |
发明人 |
PELLIZZER, FABIO;BEZ, ROBERTO;TOSI, MARINA |
分类号 |
H01L21/8238;H01L27/24;(IPC1-7):H01L21/823;H01L21/823 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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