Sublithographic contact structure, in particular for a phase change memory cell, and fabrication process thereof

摘要

A contact structure (98) for a PCM device is formed by an elongated formation (102) having a longitudinal extension parallel to the upper surface (92) of the body (91) and an end face (110) extending in a vertical plane. The end face (110) is in contact with a bottom portion of an active region (103) of chalcogenic material so that the dimensions of the contact area defined by the end face (110) are determined by the thickness (S) of the elongated formation and by the width (W) thereof. <IMAGE>