METHOD FOR PREVENTING SHORT DUE TO GATE RESIDUES OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method is provided to prevent short between a gate and a plug by removing gate residues using oxidation and cleaning processes. CONSTITUTION: A gate polysilicon layer(160) and a hard mask(180) are sequentially stacked on an active region of a silicon substrate(100). Polysilicon residues are oxidized to change a non-conductive layer(220). The non-conductive layer is removed by cleaning. A plug is then formed through an interlayer dielectric.