METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to restrain diffusion of dopants by using low-temperature processing and to reduce contact resistance by increasing the area of a plug contact. CONSTITUTION: A gate line(160) is formed by sequentially stacking and patterning an insulating layer(110), a conductive layer(120) and a hard mask(130) on a silicon substrate(100). A source/drain region(165) is formed in the substrate. An oxide layer(170) is formed on the resultant structure by PECVD(Plasma Enhanced CVD) under low-temperature. A nitride layer(180) as a spacer is formed on the oxide layer. An interlayer dielectric(190) is then formed on the resultant structure.