| 摘要 |
PURPOSE: A method for forming a contact hole for a plug of a semiconductor device is provided to reduce contact resistance by forming a metal silicide layer between an N-type junction region and the plug. CONSTITUTION: A gate insulating layer and a word line(140) are sequentially formed on a substrate(100) with an isolation layer(120). An N-type junction region(160) is formed in the substrate. A spacer(180) is formed at both sidewalls of the word line. By forming an interlayer dielectric(200) and patterning, a contact hole is formed to expose the junction region. P+ doping region(220) is formed in the exposed junction region. A plug(280) is formed in the contact hole. At this time, a metal silicide layer(260) is formed between the junction region and the plug.
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