| 摘要 |
<p>PROBLEM TO BE SOLVED: To prevent a deposited byproduct from sticking or being deposited on a discharging tube or a discharging means by making an unreacted gas and the deposited byproduct decomposed effectively in a treatment apparatus, such as a CVD system for amorphous semiconductor thin film formation, and an etching system for a thin film. SOLUTION: A heating-element unit 107, made of a material that contains silicon atoms at 0.1% or higher in atomic composition with a host material of one element kind, such as chromium, molybdenum, tungsten, vanadium, niobium, tantalum, titanium, zirconium or hafnium is put in a evacuation tube 103 between a reaction chamber 100 and a vacuum pump unit 108. The heating- element unit 107 is heated and an unreacted gas and byproducts in the discharged gas from the reaction chamber 100 are decomposed effectively.</p> |
