SEMICONDUCTOR STORAGE UNIT PROVIDED WITH INTERSECTING WORD AND BIT LINES WHEREON ARE ARRANGED MAGNETORESISTIVE MEMORY CELLS,申请号EP20020774383-传众专利搜索

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发明名称	SEMICONDUCTOR STORAGE UNIT PROVIDED WITH INTERSECTING WORD AND BIT LINES WHEREON ARE ARRANGED MAGNETORESISTIVE MEMORY CELLS
摘要
申请公布号	EP1438721(A2)	申请公布日期	2004.07.21
申请号	EP20020774383	申请日期	2002.09.17
申请人	INFINEON TECHNOLOGIES AG	发明人	SCHWARZL, SIEGFRIED
分类号	G11C11/15;G11C11/16;G11C29/04;G11C29/56;(IPC1-7):G11C11/16	主分类号	G11C11/15
代理机构		代理人
主权项
地址

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