METHOD FOR FABRICATING SAMPLE MATERIAL FOR ANALYZING DEFECT IN SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating sample material for analyzing defects in a semiconductor device is provided to easily and exactly catch fail factor by using dry-etching without loss. CONSTITUTION: A conductive line(120) with a hard mask and a nitride spacer(160a) is formed on a semiconductor substrate(100). The first oxide layer(180a), a nitride layer and the second oxide layer as an interlayer dielectric are sequentially formed on the resultant structure. A contact hole is formed to expose the substrate by selectively etching the interlayer dielectric. A plug(230a) is filled in the contact hole. The second oxide layer is removed. The hard mask and the nitride layer are simultaneously removed by dry-etching to expose the conductive line.