| 摘要 |
PURPOSE: A semiconductor integrated circuit device and a manufacturing method thereof are provided to improve a characteristic of an insulating film as well as to reduce a size of the semiconductor integrated circuit device. CONSTITUTION: A semiconductor integrated circuit device includes a plurality of columnar MISFETs(Metal Insulator Semiconductor Field Effect Transistors)(P1,P2) having first and second semiconductor regions on upper and lower portions, respectively, and a plurality of vertical MISFETs. The vertically MISFET includes a conductive film formed adjacent to a first insulating film(70a) on a sidewall of a columnar laminate. The columnar laminate and the conductive film are spaced by a first distance in a first direction, and further spaced by a second distance, which is greater than the first distance, in a second direction. A second insulating film(70b) is formed in a space between the columnar laminates in the first direction up to at least a predetermined height of the columnar laminate. A second insulating film and a third insulating film are formed in a space between the columnar laminates in the second direction.
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