| 摘要 |
A semiconductor memory device includes: a plurality of memory cells (802) for storing respective data items (0 to 3); address buffer means (802) for receiving an externally-applied address signal; group reading means (814, 804, 805) for reading from the memory cells a group of such stored data items, which group is specified by a first address (m) derivable from the externally-applied address signal; and item delivery means (807, 808) for selectively delivering the data items of such a group read by the group reading means to an output of the device in accordance with second addresses specifying respectively the individual data items of the group. The memory device further includes pre-read means (810) operable, whilst the data items of one such group, read from the memory cells by the group reading means in accordance with one such first address, are being delivered by the item delivery means to the said output in accordance with such second addresses, to cause a further such first address to be generated, different from the one first address and specifying a further such group of the stored data items, and to cause the group reading means to initiate the reading of that further group. Such a memory device permits a predetermined sequence of addresses to be read at high speed. <IMAGE> |
