| 摘要 |
Hydrogen ions (40) of high concentration are implanted into an amorphous silicon film (21). By implantation of the hydrogen ions (40), a hydrogen-ion implantation layer (41) is formed in the amorphous silicon film (21). Subsequently, by performing a heat treatment, a columnar grain is formed in a portion of the amorphous silicon film (21) other than the portion in which the hydrogen-ion implantation layer (41) is formed. On the other hand, in the hydrogen-ion implantation layer (41), a granular grain is formed. A granular grain layer (42) has a lot of grain boundaries extending multidirectionally, such as a grain boundary extending along a direction of film thickness of a polysilicon film (44a) and a grain boundary extending along a direction other than that of film thickness of the polysilicon film (44a). Thus, it is possible to achieve a method of manufacturing a semiconductor device which can appropriately suppress variation in threshold voltage which is caused by penetration of dopant.
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