METHOD FOR FORMING CONTACT HOLE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a contact hole of a semiconductor device is provided to reduce CD(Critical Dimension) of the contact hole and to improve process margin by using two-step etching processes. CONSTITUTION: The first metal film(120) made of an aluminum film and the second metal film(140) made of an ARC(Anti-Reflective Coating) TiN layer are sequentially formed on a lower layer(100). An interlayer dielectric(160) is formed on the resultant structure. A preliminary contact hole is formed by partially etching the interlayer dielectric. A contact hole is formed to expose the second metal film by entirely etching the interlayer dielectric. Then, a plug(220) is formed in the contact hole.