| 摘要 |
PURPOSE: A method for removing trench defects of a semiconductor device is provided to restrain the generation of defects in a trench. CONSTITUTION: A pad oxide pattern and a pad nitride pattern are sequentially formed on a semiconductor substrate. A trench is formed by selectively etching the substrate using a pad nitride and oxide patterns as a mask. Defects in the trench are removed by sequentially performing first cleaning of H2SO4/H2O2, HF cleaning and SAC(Self Aligned Contact) cleaning in-situ.
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