| 摘要 |
A solid state image pickup device, having: a semiconductor substrate; a plurality of pixels formed on the semiconductor substrate, each pixel having a plurality of photoelectric conversion elements inclusive of a first photoelectric conversion element and a second photoelectric conversion element electrically separated; and a light shielding film formed over the semiconductor substrate, the light shielding film having an opening above each pixel, wherein the first and second photoelectric conversion elements have different saturated exposure amounts. A solid state image pickup device is provided which has a high sensitivity and a broad optical dynamic range. <IMAGE> |
