FIELD EMISSION DEVICE HAVING DUAL GATE STRUCTURE AND FABRICATION METHOD THEREFORE

摘要

PURPOSE: A field emission device(FED) and a fabrication method of the FED are provided to prevent an electrical short circuit phenomena between a dual gate and a field emitter. CONSTITUTION: A field emission device comprises a plate(110); a cathode layer(120) formed on the plate, a gate insulating layer(130) formed on the cathode layer and the plate and which includes a cavity(170) for exposing a part of the cathode layer; a field emitter(190) located on the cathode layer exposed at a bottom of the cavity; a first gate layer(140) located in the gate insulating layer and forming a first gate hole(140a) having a larger diameter than a diameter of the cavity to not expose at an inner circumferential surface of the cavity, and a second gate layer(160) formed on the gate insulating layer and forming a second gate hole(160a) at a region corresponding to the cavity.