发明名称 |
Method of forming a metal gate electrode |
摘要 |
The present invention includes a method of forming a metal gate electrode on which whiskers are not formed after performing a selective oxidation process and a subsequent heating process. The metal gate electrode is formed by forming a metal gate electrode pattern which is comprised of a polysilicon layer and a metal layer, and performing a selective oxidation process. After the selective oxidation process, the metal gate electrode undergoes a subsequent heating treatment. The selective oxidation process is carried out in a nitrogen containing gas ambient, so that a metal oxide layer is minimally formed on the metal layer. As a result, it is prevented from causing whiskers on the metal layer.
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申请公布号 |
US6764961(B2) |
申请公布日期 |
2004.07.20 |
申请号 |
US20010992980 |
申请日期 |
2001.11.06 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KU JA-HUM;CHO MAHN-HO;CHOI CHUL-JOON;HEO SEONG-JUN;CHO JUN-KYU |
分类号 |
H01L21/28;H01L21/316;H01L21/321;H01L21/8234;H01L29/423;H01L29/43;H01L29/49;H01L29/78;(IPC1-7):H01L21/31 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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