发明名称 |
Semiconductor substrate, light emitting device, and method for producing the same |
摘要 |
A method for producing a semiconductor substrate of the present invention, includes the steps: forming a first patterned mask containing a material having a growth suppressing effect on a lower substrate; growing a semiconductor crystal on the lower substrate via the first patterned mask to form a first semiconductor crystal layer; forming a second patterned mask containing a material having a growth suppressing effect on or above the lower substrate, the second patterned mask at least having a surface which is positioned at a level different from a level of a surface of the first patterned mask, with respect to a surface of the lower substrate; and growing a semiconductor crystal on or above the lower substrate via the second patterned mask to form a second semiconductor crystal layer.
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申请公布号 |
US6765233(B2) |
申请公布日期 |
2004.07.20 |
申请号 |
US20010904162 |
申请日期 |
2001.07.11 |
申请人 |
SHARP KK |
发明人 |
TSUDA YUHZOH;ITO SHIGETOSHI;YANO SEIKI |
分类号 |
H01L21/20;H01L33/00;(IPC1-7):H01L27/15 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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