发明名称 Semiconductor substrate, light emitting device, and method for producing the same
摘要 A method for producing a semiconductor substrate of the present invention, includes the steps: forming a first patterned mask containing a material having a growth suppressing effect on a lower substrate; growing a semiconductor crystal on the lower substrate via the first patterned mask to form a first semiconductor crystal layer; forming a second patterned mask containing a material having a growth suppressing effect on or above the lower substrate, the second patterned mask at least having a surface which is positioned at a level different from a level of a surface of the first patterned mask, with respect to a surface of the lower substrate; and growing a semiconductor crystal on or above the lower substrate via the second patterned mask to form a second semiconductor crystal layer.
申请公布号 US6765233(B2) 申请公布日期 2004.07.20
申请号 US20010904162 申请日期 2001.07.11
申请人 SHARP KK 发明人 TSUDA YUHZOH;ITO SHIGETOSHI;YANO SEIKI
分类号 H01L21/20;H01L33/00;(IPC1-7):H01L27/15 主分类号 H01L21/20
代理机构 代理人
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