发明名称 |
III nitride film and a III nitride multilayer |
摘要 |
A III nitride multilayer including a given substrate, a III nitride underfilm including an Al content of 50 atomic percent or more for all of the III elements present in the III nitride underfilm, and a III nitride film including a lower Al content than the Al content of the III nitride underfilm by 10 atomic percent or more. A full width at half maximum X-ray rocking curve value of the III nitride film is set to 800 seconds or below at the (100) plane. A full width at half maximum X-ray rocking curve value of the III nitride film is set to 200 seconds or below at the (002) plane.
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申请公布号 |
US6765244(B2) |
申请公布日期 |
2004.07.20 |
申请号 |
US20020156595 |
申请日期 |
2002.05.28 |
申请人 |
NGK INSULATORS, LTD. |
发明人 |
SHIBATA TOMOHIKO;SUMIYA SHIGEAKI;ASAI KEIICHIRO;TANAKA MITSUHIRO |
分类号 |
C30B29/38;C23C16/34;C30B25/02;H01L21/20;H01L21/205;H01L29/04;H01L29/20;H01L31/18;H01L33/16;H01L33/32;(IPC1-7):H01L31/032 |
主分类号 |
C30B29/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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