发明名称 III nitride film and a III nitride multilayer
摘要 A III nitride multilayer including a given substrate, a III nitride underfilm including an Al content of 50 atomic percent or more for all of the III elements present in the III nitride underfilm, and a III nitride film including a lower Al content than the Al content of the III nitride underfilm by 10 atomic percent or more. A full width at half maximum X-ray rocking curve value of the III nitride film is set to 800 seconds or below at the (100) plane. A full width at half maximum X-ray rocking curve value of the III nitride film is set to 200 seconds or below at the (002) plane.
申请公布号 US6765244(B2) 申请公布日期 2004.07.20
申请号 US20020156595 申请日期 2002.05.28
申请人 NGK INSULATORS, LTD. 发明人 SHIBATA TOMOHIKO;SUMIYA SHIGEAKI;ASAI KEIICHIRO;TANAKA MITSUHIRO
分类号 C30B29/38;C23C16/34;C30B25/02;H01L21/20;H01L21/205;H01L29/04;H01L29/20;H01L31/18;H01L33/16;H01L33/32;(IPC1-7):H01L31/032 主分类号 C30B29/38
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